Publications
2020
Bourlier Y., Bouttemy M., Fregnaux M., Patard O., Gamarra P., Piotrowicz S., Delage S., Etcheberry A.
In-depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle-resolved X-ray photoelectron spectroscopy
Surface and Interface Analysis, vol. 52, (no. 12), pp. 914-918
2019
Potier C., Jacquet J.-C., Lacam C., Michel N., Dua C., Oualli M., Delage S.L., Piotrowicz S., Chang C., Patard O., Trinh-Xuan L., Gruenenpuett J., Gamarra P., Altuntas P., Chartier E.
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019 49th European Microwave Conference, EuMC 2019, pp. 824-827
2019
Aroulanda S., Patard O., Altuntas P., Michel N., Pereira J., Lacam C., Gamarra P., Delage S.L., Defrance N., De Jaeger J.-C., Gaquiere C.
Cl2/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science and Technology A, vol. 37, (no. 4)
2019
Malmros A., Gamarra P., Thorsell M., Hjelmgren H., Lacam C., Delage S.L., Zirath H., Rorsman N.
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier
IEEE Transactions on Electron Devices, vol. 66, (no. 1), pp. 364-371
2019
Mohamad R., Chauvat M.P., Kret S., Gamarra P., Delage S., Hounkpati V., Lacam C., Chen J., Ruterana P.
The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
Journal of Applied Physics, vol. 125, (no. 21)
2018
Mohamad R., Bere A., Hounkpati V., Gamarra P., Chen J., Ruterana P.
A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys
Physica Status Solidi (B): Basic Research, vol. 255, (no. 5)
2018
Potier C., Piotrowicz S., Patard O., Gamarra P., Altuntas P., Chartier E., Dua C., Jacquet J.C., Lacam C., Michel N., Oualli M., Delage S.L., Chang C., Gruenenpuett J.
First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2018 - Proceedings
2018
Piotrowicz S., Jacquet J.-C., Gamarra P., Patard O., Dua C., Chartier E., Michel N., Oualli M., Lacam C., Potier C., Altuntas P., Delage S.
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
International Journal of Microwave and Wireless Technologies, vol. 10, (no. 1), pp. 39-46
2018
Bourlier Y., Bouttemy M., Patard O., Gamarra P., Piotrowicz S., Vigneron J., Aubry R., Delage S., Etcheberry A.
Investigation of InAlN layers surface reactivity after thermal annealings: A complete XPS study for HEMT
ECS Journal of Solid State Science and Technology, vol. 7, (no. 6), pp. P329-P338
2018
Minj A., Ammar H.B., Cros A., Garro N., Gamarra P., Delage S.L., Ruterana P.
Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy
Physica Status Solidi (B): Basic Research, vol. 255, (no. 5)
2018
Oualli M., Dua C., Patard O., Altuntas P., Piotrowicz S., Gamarra P., Lacam C., Jacquet J.-C., Teisseire L., Lancereau D., Chartier E., Potier C., Delage S.L.
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
Microelectronics and Reliability, vol. 88-90, pp. 418-422
2017
Vilalta-Clemente A., Naresh-Kumar G., Nouf-Allehiani M., Gamarra P., di Forte-Poisson M.A., Trager-Cowan C., Wilkinson A.J.
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
Acta Materialia, vol. 125, pp. 125-135
2017
Ben Ammar H., Minj A., Gamarra P., Lacam C., Tordjman M., di Forte-Poisson M.A., Morales M., Chauvat M.P., Ruterana P.
Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure
Physica Status Solidi (A) Applications and Materials, vol. 214, (no. 4)
2017
Rzin M., Routoure J.-M., Guillet B., Mechin L., Morales M., Lacam C., Gamarra P., Ruterana P., Medjdoub F.
Impact of Gate-Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, vol. 64, (no. 7), pp. 2820-2825
2017
Gamarra P., Lacam C., Tordjman M., Medjdoub F., di Forte-Poisson M.-A.
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs
Journal of Crystal Growth, vol. 464, pp. 143-147